Effects of stress on electrical transport properties of nickel silicide thin layers synthesized by Ni-ion implantation

Journal of Applied Physics

Volumn 92, Issue 7, 2002, Pages 3778-3783

  Zhang, X W ^a   Wong, S P ^a   Cheung, W Y ^a  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALED SAMPLES; BIAXIAL STRESS STATE; ELASTIC PROPERTIES; ELECTRICAL RESISTIVITY; ELECTRICAL TRANSPORT PROPERTIES; HALL EFFECT MEASUREMENT; HIGHLY-CORRELATED; ION DOSE; METAL VAPOR VACUUM ARCS; MICRO RAMAN SPECTROSCOPY; NICKEL DISILICIDE; NICKEL ION IMPLANTATION; NICKEL SILICIDE; PREPARATION CONDITIONS; RUTHERFORD BACK-SCATTERING SPECTROMETRY; SHEET RESISTIVITY; SILICON SUBSTRATES; TEMPERATURE CURVES; TEMPERATURE DEPENDENCE; THIN LAYERS; VALLEY FEATURES;

ELECTRIC CONDUCTIVITY; HALL MOBILITY; ION SOURCES; NICKEL COMPOUNDS; RAMAN SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICIDES; TRANSPORT PROPERTIES; VACUUM APPLICATIONS; VAPORS; X RAY DIFFRACTION;

ION IMPLANTATION;

EID: 18644369887     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1503409     Document Type: Article

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