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Applied Physics A: Materials Science and Processing

Volumn 68, Issue 3, 1999, Pages 333-337

Formation of high-conductivity NiSi2, layers on Si at zero-mismatch temperature by high-current Ni-ion implantation

(2) Gao, K Y a Liu, B X a

a TSINGHUA UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

COOLING; CRYSTAL DEFECTS; CRYSTAL LATTICES; CURRENT DENSITY; ELECTRIC CONDUCTIVITY OF SOLIDS; HEAT CONDUCTION; ION IMPLANTATION; NICKEL; NICKEL COMPOUNDS; SEMICONDUCTOR DOPING; THERMAL EXPANSION;

LATTICE MISMATCH; NICKEL SILICIDE;

SILICON WAFERS;

EID: 0033099585 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s003390050898 Document Type: Article

Times cited : (11)

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