|
|
|
Volumn 402, Issue , 1996, Pages 487-492
|
|
Electrical characteristics of CoSi2 layers formed by MEVVA implantation of Co into Si
a
|
|
Author keywords
[No Author keywords available]
|
|
Indexed keywords
ANNEALING;
ELECTRIC CONDUCTIVITY;
ELECTRIC CONDUCTIVITY MEASUREMENT;
ELECTRIC PROPERTIES;
HALL EFFECT;
ION IMPLANTATION;
ION SOURCES;
SEMICONDUCTING SILICON;
SUBSTRATES;
THERMAL EFFECTS;
COBALT DISILICIDE;
METAL VAPOR VACUUM ARC ION SOURCE;
RAPID THERMAL ANNEALING;
SUBSTRATE TEMPERATURE;
COBALT COMPOUNDS;
|
|
EID: 0029734071
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
|
Times cited : (3)
|
|
References (21)
|
