Inorganic antireflective coating process for deep-UV lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3334, Issue , 1998, Pages 337-346

  He, Qizhi ^a   Lee, Wei W ^a   Hanratty, Maureen A ^a   Rogers, Daty ^a   Xing, Guoqiang ^a   Singh, Abha ^a   Zielinski, Eden ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

Bottom antireflective coating; Deep UV; Inorganic; Linewidth control; Lithography; Organic; Poly Si; Resist; Silicon oxynitride

Indexed keywords

CAVITY RESONATORS; COATINGS; DIELECTRIC DEVICES; DIELECTRIC FILMS; LIGHT REFLECTION; LINEWIDTH; LITHOGRAPHY; MICROMETERS; NITRIDES; OPTICAL PROPERTIES; PHASE INTERFACES; PHOTORESISTORS; PLASMA DEPOSITION; POLYSILICON; REFLECTION; REFRACTIVE INDEX; SILICON; SILICON NITRIDE; SURFACE TREATMENT; THICKNESS MEASUREMENT;

BOTTOM ANTIREFLECTIVE COATING; DEEP UV; INORGANIC; LINEWIDTH CONTROL; ORGANIC; POLY SI; RESIST; SILICON OXYNITRIDE;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 0012051676     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.310763     Document Type: Conference Paper

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