Microstructure and composition analysis of group III nitrides by X-ray scattering

Journal of Crystal Growth

Volumn 230, Issue 3-4, 2001, Pages 398-404

  Fewster, P F ^a   Andrew, N L ^a   Foxon, C T ^b  

^a MALVERN INSTRUMENTS LTD   (United Kingdom)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

A1. X ray diffraction; A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; A3. Superlattices; B1. Nitrides; B2. Semiconducting III V materials; B3. Laser diodes; B3. Light emitting diodes

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL DEFECTS; CRYSTAL MICROSTRUCTURE; LIGHT EMITTING DIODES; MATHEMATICAL MODELS; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; SUPERLATTICES; X RAY SCATTERING;

DYNAMICAL SCATTERING MODEL;

SEMICONDUCTOR MATERIALS;

EID: 0035451610     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01306-9     Document Type: Article

References (6)

1. Microscopy of semiconductor materials