Effect of CH4 concentration control during synthesis of homoepitaxial diamond thin films

New Diamond and Frontier Carbon Technology

Volumn 8, Issue 5, 1998, Pages 317-322

  Takeuchi, Daisuke ^a   Yamanaka, Sadanori ^a,b   Watanabe, Hideyuki ^a,b   Kawata, Sakae ^c   Masai, Shigeo ^c   Sekiguchi, Takashi ^d   Sawada, Hidetaka ^e   Ichinose, Hideki ^e   Okushi, Hideyo ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c TOKAI UNIVERSITY   (Japan)

^d TOHOKU UNIVERSITY   (Japan)

^e UNIVERSITY OF TOKYO   (Japan)

Author keywords

Growth rate; Homoepitaxial diamond; Low CH4 concentration; Two step growth

Indexed keywords

EID: 3042911710     PISSN: 13449931     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (6)

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3. D. Takeuchi, H. Okushi, S. Yamanaka, H. Watanabe and K. Kajimura: New Diamond 52 (1999) 7.
4. K. Hayashi, S. Yamanaka, H. Okushi and K. Kajimura: Appl. Phys. Lett. 68-3 (1996) 376.
5. S. Yamanaka, K. Hayashi, H. Okushi and K. Kajimura: Mater. Res. Soc. Symp. Proc. 423 (1996) 353.
6. S. Yamanaka, H. Watanabe, S. Masai, S. Kawata, K. Hayash, D. Takeuchi, H. Okushi and K. Kajimura: J. Appl. Phys. 84 (1998) 6095.