MBE growth and properties of GaAsSbN/GaAs single quantum wells

Journal of Crystal Growth

Volumn 279, Issue 3-4, 2005, Pages 293-302

  Wu, Liangjin ^a   Iyer, Shanthi ^a   Nunna, Kalyan ^a   Li, Jia ^a   Bharatan, Sudhakar ^a   Collis, Ward ^a   Matney, Kevin ^b  

^a NORTH CAROLINA A AND T STATE UNIVERSITY   (United States)

^b Bede Scientific Inc   (United States)

Author keywords

A1. High resolution X ray diffraction; A1. Reflection high energy electron diffraction; A3. Molecular beam epitaxy; A3. Quantum wells; B1. Nitride; B2. Semiconducting III V materials; B3. Long wavelength laser diodes

Indexed keywords

CRYSTAL GROWTH; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; NITRIDES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS; X RAY DIFFRACTION ANALYSIS;

HIGH-RESOLUTION X-RAY DIFFRACTION; LONG WAVELENGTH LASER DIODES; SEMICONDUCTING III-V MATERIALS; SINGLE QUANTUM WELLS (SQW);

SEMICONDUCTOR QUANTUM WELLS;

EID: 18444373566     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.02.033     Document Type: Article

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