Mobility of Charge Carriers in Regioregular Poly(3-hexylthiophene) Induced by Field-Effect Transistor with Al2O3 as Gate Insulator

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 1, 2004, Pages 366-371

  Ukai, Sota ^a   Ito, Hiroshi ^a   Kuroda, Shin Ichi ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

Carrier density; Field effect transistor and Al2O3; Mobility; Regioregular poly(3 hexylthiophene); Temperature dependence

Indexed keywords

ALUMINA; CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; ORGANIC POLYMERS; PLASTIC FILMS;

GATE INSULATORS; INTERCHAIN COUPLING;

CHARGE CARRIERS;

EID: 1842810175     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.366     Document Type: Article

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