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Journal of Materials Science

Volumn 39, Issue 7, 2004, Pages 2637-2640

Transport properties of InAs epilayers grown on GaAs substrates by using the prelayer technique

(5) Cai, L C a,b Chen, H a Bao, C L a Huang, Q a Zhou, J M a

a INSTITUTE OF PHYSICS (China)

b 705 Engineering Research Center (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON MOBILITY; ELECTRONS; HALL EFFECT; IONIZATION; OPTOELECTRONIC DEVICES; PARAMETER ESTIMATION; PHONONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAMPLING; SEMICONDUCTING GALLIUM ARSENIDE;

EPILAYERS; PRELAYER TECHNIQUES;

INDIUM COMPOUNDS;

EID: 1842766353 PISSN: 00222461 EISSN: None Source Type: Journal
DOI: 10.1023/B:JMSC.0000020047.61719.50 Document Type: Article

Times cited : (3)

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