Characteristics of InAs epilayers for Hall effect devices grown on GaAs substrates by MBE

Journal of Crystal Growth

Volumn 179, Issue 3-4, 1997, Pages 658-660

  Wang, H M ^a   Zeng, Y P ^a   Fan, T W ^a   Zhou, H W ^a   Pan, D ^a   Dong, J R ^a   Kong, M Y ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRON TRANSPORT PROPERTIES; FILM GROWTH; HALL EFFECT; MOLECULAR BEAM EPITAXY; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES; THERMAL EFFECTS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON MOBILITY; INDIUM ARSENIDE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0031207997     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00219-4     Document Type: Article

References (7)

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