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Volumn 22, Issue 8, 2003, Pages 599-601
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Strain relaxation of InAs epilayer on GaAs under In-rich conditions
a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
GALLIUM COMPOUNDS;
INDIUM COMPOUNDS;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SURFACE ROUGHNESS;
TRANSMISSION ELECTRON MICROSCOPY;
STRAIN RELAXATION;
RELAXATION PROCESSES;
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EID: 0038475937
PISSN: 02618028
EISSN: None
Source Type: Journal
DOI: 10.1023/A:1023350529729 Document Type: Article |
Times cited : (2)
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References (12)
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