RHEED characterization of InAs/GaAs grown by MBE

Journal of Crystal Growth

Volumn 197, Issue 1-2, 1999, Pages 364-367

  Cai, L C ^a   Chen, H ^a   Bao, C L ^a   Huan, Q ^a   Zhou, J M ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

Heteroepitaxy; InAs; MBE; RHEED oscillation

Indexed keywords

MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; SURFACE ROUGHNESS;

CRITICAL FLUX RATIOS; INDIUM ARSENIDE;

SEMICONDUCTOR GROWTH;

EID: 0033079358     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00913-0     Document Type: Article

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