Trench transformation technology using hydrogen annealing for realizing highly reliable device structure with thin dielectric films

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1998, Pages 206-207

  Sato, Tsutomu ^a   Mizushima, Ichiro ^a   Iba, Jun ichiro ^a   Kito, Masaru ^a   Takegawa, Yoichi ^a   Sudo, Akira ^a   Tsunashima, Yoshitaka ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC PROPERTIES; ETCHING; HYDROGEN; MORPHOLOGY; THIN FILMS;

TRENCH TRANSFORMATION TECHNOLOGY;

DIELECTRIC FILMS;

EID: 0031625402     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)