Influence of pinning trap in Ti/4H-SiC Schottky barrier diode

Materials Science in Semiconductor Processing

Volumn 6, Issue 5-6, 2003, Pages 359-362

  Ohtsuka, K ^a   Matsuno, Y ^a   Hase, Y ^a   Sugimoto, H ^a   Fujihira, K ^a   Tarui, Y ^a   Imaizumi, M ^a   Takami, T ^a   Ozeki, T ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Breakdown; Interface pinning; Power device; Schottky barrier; SiC

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; LEAKAGE CURRENTS; RAPID THERMAL ANNEALING; SPUTTERING; TITANIUM ALLOYS;

BREAKDOWN; INTERFACE PINNING; POWER DEVICES; SCHOTTKY BARRIERS; SIC;

SCHOTTKY BARRIER DIODES;

EID: 1842483867     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2003.08.016     Document Type: Conference Paper

References (9)

1. Itoh A., Kimoto T., Matsunami H. Low power-loss 4H-SiC Schottky rectifiers with high blocking voltage. Inst Phys Conf Ser. 142:1996;689.
2. Kimoto T, Wahab Q, Ellison A, Forsberg U, Tuiminen M, Yakimova R, Henry A, Yanzen E. High-voltage (>2.5 kV) 4H-SiC Schottky rectifiers processed on hot-wall CVD and high-temperature CVD layers. Mat Sci Forum 1998;364-368:921.
3. Ohtsuka K., Sugimoto H., Kinouchi S., Tarui Y., Imaizumi M., Takami T., Ozeki T. Minimization of electric field enhancement at electrode edge by surface high resistive layer in Ti/4H-SiC Schottky barrier diodes. Mat Sci Forum. 389-393:2002;1165.
4. Konstantinov A.O., Wahab Q., Nordell N., Lindefelt U. Ionization rate and critical fields in 4H-SiC junction diodes. Mat Sci Forum. 264-268:1998;513.
5. Skromme B.J., Luckowski E., Moore K., Clemens S., Resnick D., Gehoski T., Ganser D. Fermi level pinning and Schottky barrier characteristics on reactively ion etched 4H-SiC. Mat Sci Forum. 338-342:2000;1029.
6. Shigiltchoff O, Sai B, Devaty RP, Choyke WJ, Kimoto T, Hobgood D, Neudeck PG, Porter LM. Schottky barriers for Pt, Mo and Ti on 6H and 4H-SiC (0001), (000-1), (1-100) and (1-210) faces measured by I-V, C-V and internal photoemission. Mat Sci Forum 2003;433-436:705.
7. Schoen K.J., Henning J.P., Woodall J.M., Cooper J.A. Jr., Melloch M.R. A dual-metal-trench Schottky pinch-rectifier in 4H-SiC. IEEE Electron Device Lett. 19:1998;97.
8. Hasegawa H., Ohno H. Unified disorder induced gap state model for insulator-semiconductor and metal-semiconductor interfaces. J Vac Sci Tech B. 4:1986;1130.
9. 2 interfaces. J Appl Phys. 79:1996;3108.