Fermi level pinning and Schottky barrier characteristics on reactively ion etched 4H-SiC

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Skromme, B J ^a,b   Luckowski, E ^a   Moore, K ^a   Clemens, S ^a   Resnick, D ^a   Gehoski, T ^a   Ganser, D ^a  

^a MOTOROLA INC   (United States)

^b Arizona State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; FERMI LEVEL; LEAKAGE CURRENTS; NICKEL; PLATINUM; REACTIVE ION ETCHING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR METAL BOUNDARIES; SILICON CARBIDE; TITANIUM;

FERMI LEVEL PINNING; SCHOTTKY BARRIERS;

SCHOTTKY BARRIER DIODES;

EID: 0033725861     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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