Minimization of electric field enhancement at electrode edge by surface high resistive layer in Ti/4H-SiC schottky barrier diode

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1165-1168

  Ohtsuka, K ^a   Sugimoto, H ^a   Kinouchi, S I ^a   Tarui, Y ^a   Imaizumi, M ^a   Takami, T ^a   Ozeki, T ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Breakdown; Electrode edge; Pinning; Schottky; Trap

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRODES; LEAKAGE CURRENTS; SILICON CARBIDE; ELECTRIC FIELD EFFECTS; ELECTRIC RESISTANCE; OPTIMIZATION; SCHOTTKY BARRIER DIODES; SURFACE PHENOMENA; TITANIUM;

BREAKDOWN; ELECTRIC FIELD ENHANCEMENT; HIGH BREAKDOWN VOLTAGE; PINNING; SCHOTTKY; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY ELECTRODES; TRAP; SURFACE LAYERS;

SCHOTTKY BARRIER DIODES; SILICON CARBIDE;

EID: 0036433969     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1165     Document Type: Conference Paper

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