SCOPUS 정보 검색 플랫폼

Volumn 482-485, Issue PART 1, 2001, Pages 189-195

Initial oxidation states on Si(0 0 1) surface induced by translational kinetic energy of O2 at room temperature studied by Si-2p core-level spectroscopy using synchrotron radiation

(2) Yoshigoe, A a Teraoka, Y a

a JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE (Japan)

Author keywords

Oxidation; Silicon; Synchrotron radiation photoelectron spectroscopy

Indexed keywords

KINETIC ENERGY; OXIDATION; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; SEMICONDUCTING SILICON; SYNCHROTRON RADIATION;

CORE-LEVEL SPECTROSCOPY;

SURFACE CHEMISTRY;

EID: 18244416289 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(01)00749-X Document Type: Conference Paper

Times cited : (8)

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