Growth of Ge layers with high hole mobility on surface controlled AlAs by molecular beam epitaxy

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 194-197

  Maeda, Takeshi ^a   Tanaka, Hitoshi ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM; SURFACE STRUCTURE;

SURFACE RECONSTRUCTION; SURFACE SEGREGATION;

SEMICONDUCTOR GROWTH;

EID: 0032629425     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01319-0     Document Type: Article

References (2)

1. Maeda T., Tanaka H., Takikawa M., Kasai K. J. Crystal Growth. 150:1995;649.
2. Dabiran A.M., Cohen P.I. J. Crystal Growth. 150:1995;23.