SCOPUS 정보 검색 플랫폼

Volumn 174-175, Issue , 2003, Pages 1178-1181

Epitaxial silicon films deposited at high rates by gas-jet electron beam plasma CVD

(7) Sharafutdinov, R G a Karsten, V M a Khmel, S Ya a Cherkov, A G b Gutakovskii, A K b Pokrovsky, L D b Semenova, O I b

a KUTATELADZE INSTITUTE OF THERMOPHYSICS (Russian Federation)

b INSTITUTE OF SEMICONDUCTOR PHYSICS (Russian Federation)

Author keywords

GJ EBP CVD; Reflection high energy electron diffraction; Silane; Silicon epitaxy

Indexed keywords

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; ULTRAHIGH VACUUM;

THREADING DISLOCATIONS;

SILICON WAFERS;

COATING; INDUSTRIAL APPLICATION; PLASMA; SURFACE PROPERTY;

EID: 18144433191 PISSN: 02578972 EISSN: None Source Type: Journal
DOI: 10.1016/S0257-8972(03)00452-3 Document Type: Article

Times cited : (7)

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