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Physica Status Solidi (A) Applied Research

Volumn 188, Issue 1, 2001, Pages 425-428

Effects of Substrate Pretreatment and Buffer Layers on GaN Epilayers Grown by Hydride Vapor Phase Epitaxy

(12) Zhang, W a Alves, H R a Blaesing, J b Riemann, T b Heuken, M c Veit, P b Pfisterer, D a Gregor, R a Hofmann, D M a Krost, A b Christen, J b Meyer, B K a

a JUSTUS LIEBIG UNIVERSITY (Germany)

b OTTO VON GUERICKE UNIVERSITY (Germany)

c AIXTRON AG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 18044400956 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/1521-396X(200111)188:1<425::AID-PSSA425>3.0.CO;2-P Document Type: Article

Times cited : (2)

References (15)

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