Initial adsorption of Ge on Si(1 1 1)-(7 × 7) surface at room temperature

Surface Science

Volumn 498, Issue 1-2, 2002, Pages 83-88

  Yan, Long ^a   Yang, Haiqiang ^a   Gao, Hongjun ^a   Xie, Sishen ^a   Pang, Shijin ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

Germanium; Scanning tunneling microscopy; Silicon

Indexed keywords

ADSORPTION; FERMI LEVEL; GERMANIUM; MOLECULAR ORIENTATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM DOTS; SILICON; ULTRAHIGH VACUUM;

SURFACE ADSORPTION;

SURFACE PHENOMENA;

EID: 0036467869     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(01)01445-5     Document Type: Article

References (17)