Na Adsorption on the Si(111)-(7 × 7) Surface: From Two-Dimensional Gas to Nanocluster Array

Physical Review Letters

Volumn 91, Issue 12, 2003, Pages 1261011-1261014

  Wu, Kehui ^a   Fujikawa, Y ^a   Nagao, T ^a   Hasegawa, Y ^a,d   Nakayama, K S ^a,e   Xue, Q K ^a,b   Wang, E G ^a,b   Briere, T ^a   Kumar, V ^a   Kawazoe, Y ^a   Zhang, S B ^c   Sakurai, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b INSTITUTE OF PHYSICS   (China)

^c NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^d UNIVERSITY OF TOKYO   (Japan)

^e UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; COMPUTER SIMULATION; SCANNING TUNNELING MICROSCOPY; SELF ASSEMBLY; SODIUM;

NANOCLUSTER ARRAYS;

SILICON;

EID: 0142188664     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (31)

1. K. Bromann er al., Science 274, 956 (1996).
2. H. Brune et al., Nature (London) 394, 451 (1998).
3. S. Sun et al., Science 287, 1989 (2000).
4. J. L. Li et al., Phys. Rev. Lett. 88, 066101 (2002).
5. L. Johansson and B. Reihl, Phys. Rev. Lett. 67, 2191 (1991).
6. A. Liebsch, Phys. Rev. Lett. 67, 2858 (1991).
7. P. Fouquet and G. Witte, Phys. Rev. Lett. 83, 360 (1999).
8. D. Jeon et al., Phys. Rev. Lett. 69, 1419 (1992).
9. F. Song et al., Phys. Rev. Lett. 88, 167202 (2002).
10. Y. Hasegawa et al., J. Vac. Sci. Technol. A 8, 238 (1990).
11. K. O. Magnusson and B. Reihl, Phys. Rev. B 41, 12071 (1990).
12. T. Hashizume et al., J. Vac. Sci. Technol. B 9, 745 (1991).
13. H. H. Weitering et al., Phys. Rev. B 48, 8119 (1993); H. H. Weitering et al., Surf. Sci. 307, 978 (1994).
14. H. H. Weitering et al., Phys. Rev. B 48, 8119 (1993); H. H. Weitering et al., Surf. Sci. 307, 978 (1994).
15. D. D. Brommer et al., Surf. Sci. 314, 57 (1994).
16. J. Eitle et al., J. Vac. Sci. Technol. B 16, 2894 (1998).
17. J. J. Paggel et al., Surf. Sci. 414, 221 (1998).
18. T. Sakurai et al., Phys. Rev. B 12, 5349 (1975).
19. J. J. Boland, Phys. Rev. Lett. 65, 3325 (1990).
20. T. Sakurai et al., J. Vac. Sci. Technol. A 8, 259 (1990).
21. K. Cho and E. Kaxiras, Surf. Sci. 396, L261 (1998).
22. T. Sakurai et al., Prog. Surf. Sci. 33, 3 (1990).
23. T. Nagao et al., Surf. Sci. 329, 269 (1995).
24. G. S. Glander and M. B. Webb, Surf. Sci. 222, 64 (1989).
25. Y. J. Ko et al., Phys. Rev. B 51, 4329 (1995).
26. We have confirmed by STM that a perfect (4 × 1) surface does form on the Si(100) at Δφ = -1.5 eV. For the Si(111)-(7 × 7) surface, the absolute Na coverage was calibrated by the evaporation time and confirmed by Δφ and STM observations. To ensure the constant Na flux throughout the experiment, we frequently checked Δφ with the standard evaporation condition. The error in our Na coverage determination is within 5%.
27. T. Sato et al., J. Vac. Sci. Technol. A 18, 960 (2000).
28. H. Uchida et al., Phys. Rev. B 66, 161316 (2002).
29. K. Wu et al. (to be published).
30. G. Kresse and J. Furthmuller, Comput. Mater. Sci. 6, 15 (1996).
31. J. P. Perdew, in Electronic Structure of Solids '91, edited by P. Ziesche and H. Eschrig (Akademie Verlag, Berlin, 1991).