Independent electronic and magnetic doping in (Ga, Mn)As based digital ferromagnetic heterostructures

Physical Review B - Condensed Matter and Materials Physics

Volumn 68, Issue 16, 2003, Pages

  Johnston Halperin, E ^a   Schuller, A ^a   Gallinat, S ^a   Kreutz, C ^a   Myers, C ^a   Kawakami, K ^a   Knotz, H ^a   Gossard, C ^a   Awschalom, D ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; BERYLLIUM; GALLIUM; IRON; MANGANESE;

ARTICLE; CHEMICAL MODIFICATION; ELECTRON DIFFRACTION; ELECTRONICS; LOW TEMPERATURE PROCEDURES; MAGNETISM; MATHEMATICAL ANALYSIS; SEMICONDUCTOR;

EID: 0347498174     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.68.165328     Document Type: Article

References (31)

1. H. Munekata, H. Ohno, S. von Molnar, Armin Segmüller, L. L. Chang, and L. Esaki, Phys. Rev. Lett. 63, 1849 (1989).
2. H. Ohno, A. Shen, F. Matsukura, A. Oiwa, A. Endo, S. Katsumoto, and Y. F. Iye, Appl. Phys. Lett. 69, 363 (1996).
3. F. Matsukura, E. Abe, and H. Ohno, J. Appl. Phys. 87, 6442 (2000).
4. K. Takamura, F. Matsukura, D. Chiba, and H. Ohno, Appl. Phys. Lett. 81, 2590 (2002).
5. M. N. Baibich, J. M. Broto, A. Fert, F. Nguyen Van Dau, F. Petroff, P. Eitenne, G. Creuzet, A. Friederich, and J. Chazelas, Phys. Rev. Lett. 61, 2472 (1988).
6. Y. Ohno, D. K. Young, B. Beschoten, F. Matsukura, H. Ohno, D. D. Awschalom, Nature (London) 402, 790 (1999).
7. E. Johnston-Halperin, D. Lofgreen, R. K. Kawakami, D. K. Young, L. Coldren, A. C. Gossard, and D. D. Awschalom, Phys. Rev. B. 65, 041306 (2002).
8. H. Ohno, D. Chiba, F. Matsukura, T. Omiya, E. Abe, T. Dietl, Y. Ohno, and K. Ohtani, Nature (London) 408, 944 (2000).
9. H. Ohno, Science 281, 951 (1998).
10. T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, Science 287, 1019 (1999).
11. M. A. Herman and H. Sitter, Molecular Beam Epitaxy (Springer-Verlag, Berlin, 1996).
12. R. K. Kawakami, E. Johnston-Halperin, L. F. Chen, M. Hanson, N. Guébels, J. S. Speck, A. C. Gossard, and D. D. Awschalom, Appl. Phys. Lett. 77, 2379 (2000).
13. H. X. Tang, R. K. Kawakami, D. D. Awschalom, and M. L. Roukes, cond-mat 0210118 (unpublished).
14. F. W. Smith, A. R. Calawa, C. L. Chen, M. J. Manfra, and L. J. Mahoney, IEEE Electron Device Lett. EDL-9, 77 (1988).
15. A. Suda and N. Otsuka, Appl. Phys. Lett. 73, 1529 (1998).
16. H. Sugiura, M. Kawashima, and Y. Horikoshi, Jpn. J. Appl. Phys. 25, 847 (1986).
17. F. Schippan, M. Kästner, L. Däweritz, and K. H. Ploog, Appl. Phys. Lett. 76, 834 (2000).
18. Y. Horikoshi, M. Kawashima, and H. Yamaguchi, Appl. Phys. Lett. 50, 1686 (1987).
19. R. E. Pritchard, S. A. McQuaid, L. Hart, R. C. Newman, J. Mäkinen, H. J. von Bardeleben, and M. Missous, J. Appl. Phys. 78, 2411 (1995).
20. D. Wu and J. Shi (private communication).
21. J. M. Cowley, Diffraction Physics (Elsevier, Amsterdam, 1995).
22. S. J. Potashnik, K. C. Ku, S. H. Chun, J. J. Berry, N. Samarth, and P. Schiffer, Appl. Phys. Lett. 79, 1495 (2001).
23. H. Ohno, D. Chiba, F. Matsukura, T. Omiya, E. Abe, T. Dietl, Y. Ohno, and K. Ohtani, Nature (London) 408, 944 (2000).
24. A. M. Nazmul, S. Sugahara, and M. Tanaka, Appl. Phys. Lett. 80, 3120 (2002).
25. H. Ohno, F. Matsukura, A. Shen, Y. Sugawara, A. Oiwa, A. Endo, S. Katsumoto, and Y. Iye, Proceedings of the 23rd International Conference on Physics of Semiconductors, Berlin, 1996, edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996), pp. 405–408.
26. T. Slupinski, H. Munekata, and A. Oiwa, Appl. Phys. Lett. 80, 1592 (2002).
27. J. Schuller, E. Johnston-Halperin, C. S. Gallinat, R. C. Myers, A. C. Gossard, and D. D. Awschalom (unpublished).
28. H. Shimizu, T. Hayashi, T. Nishinaga, and M. Tanaka, Appl. Phys. Lett. 74, 398 (1999).
29. T. C. Kreutz, G. Zanelatto, E. G. Gwinn, and A. C. Gossard, Appl. Phys. Lett. 81, 4766 (2002).
30. A. Oiwa, S. Katsumoto, A. Endo, M. Hirasawa, Y. Iye, H. Ohno, F. Matsukura, A. Shen, and Y. Sugawara, Solid State Commun. 103, 209 (1997).
31. M. E. Flatté, Z. G. Yu, E. Johnston-Halperin, and D. D. Awschalom, Appl. Phys. Lett. 82, 4740 (2003).