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Physical Review B - Condensed Matter and Materials Physics

Volumn 68, Issue 3, 2003, Pages 353081-353089

Electronic parameters and interfacial properties of GaAs/Al xGa1-xAs multiquantum wells grown on (111)A GaAs by metalorganic vapor phase epitaxy

(4) Cho, Soohaeng a Sanz Hervas A a,c Majerfeld, A a Kim, B W b

a University of Colorado at Boulder (United States)

b Electronics and Telecommunications Research Institute (ETRI) (South Korea)

c UNIVERSIDAD POLITÉCNICA DE MADRID (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ARSENIC; GALLIUM;

ANALYTIC METHOD; ARTICLE; CRYSTAL STRUCTURE; ELECTRONICS; EPITAXY; EVALUATION; MATHEMATICAL PARAMETERS; METAL BINDING; MULTIQUANTUM WELL; OPTICS; PERIODICITY; PHOTOLUMINESCENCE; PHOTOREFLECTANCE SPECTROSCOPY; QUALITY CONTROL; QUANTUM CHEMISTRY; REFLECTOMETRY; REPRODUCIBILITY; SURFACE PROPERTY; VAPOR; VAPORIZATION; X RAY DIFFRACTION;

EID: 17944399667 PISSN: 10980121 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (5)

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