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Volumn 195, Issue 1-4, 1998, Pages 558-563

Effect of the growth parameters on the luminescence properties of high-quality GaAs/AlGaAs multiquantum wells on (1 1 1)A substrates by metal organic vapor phase epitaxy

(6) Sanz Hervas A a,b Cho, Soohaeng a Kim, Jongseok a Majerfeld, A a Villar, C b,d Kim, B W c

a University of Colorado at Boulder (United States)

b UNIVERSIDAD POLITÉCNICA DE MADRID (Spain)

c Electronics and Telecommunications Research Institute (ETRI) (South Korea)

d UNIVERSITY OF VALLADOLID (Spain)

Author keywords

(1 1 1)A; GaAs AlGaAs; HRXRD; MOVPE; MQW; Photoluminescence

Indexed keywords

CRYSTAL GROWTH; CRYSTAL ORIENTATION; METALLORGANIC VAPOR PHASE EPITAXY; MONOLAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SUBSTRATES; X RAY CRYSTALLOGRAPHY;

ALUMINUM GALLIUM ARSENIDE; ATMOSPHERIC-PRESSURE METALLORGANIC VAPOR-PHASE EPITAXY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032477165 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00593-4 Document Type: Article

Times cited : (10)

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