Interfacial properties of (111)A GaAs/AlGaAs multiquantum-well structures grown by metalorganic vapor phase epitaxy

Applied Physics Letters

Volumn 76, Issue 21, 2000, Pages 3073-3075

  Sanz Hervas A ^a,c   Cho, Soohaeng ^a   Majerfeld, A ^a   Kim, B W ^b  

^a UCB 450   (United States)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^c UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0004867547     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126583     Document Type: Article

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