Metalorganic vapor phase epitaxy growth and properties of GaAs/AlGaAs and InGaAs/GaAs quantum well structures on (111)A GaAs substrates

Microelectronics Journal

Volumn 30, Issue 4, 1999, Pages 455-459

  Cho, Soohaeng ^a   Sanz Hervas A ^a   Kim, Jongseok ^a   Majerfeld, A ^a   Villar, C ^b   Kim, B W ^c  

^a UCB 450   (United States)

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; CRYSTAL ORIENTATION; METALLORGANIC VAPOR PHASE EPITAXY; MONOLAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE ROUGHNESS;

FULL WIDTH AT HALF MAXIMUM (FWHM);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032635083     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(98)00152-9     Document Type: Article

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