Characterization of Si wafers by μ-PCD with surface electric field

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 73, Issue 1, 2000, Pages 230-234

  Ichimura, M ^a   Hirano, M ^a   Tada, A ^a   Arai, E ^a   Takamatsu, H ^b   Sumie, S ^b  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b KOBE STEEL LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; FERMI LEVEL; HYDROFLUORIC ACID; PHOTOCONDUCTIVITY; SURFACE PROPERTIES; SURFACE TREATMENT;

CARRIER LIFETIME; CHEMICAL TREATMENT; MICROWAVE REFLECTANCE PHOCONDUCTIVITY DECAY METHOD; SURFACE RECOMBINATION;

SILICON WAFERS;

EID: 0033890395     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00469-9     Document Type: Article

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