Epitaxy on GaN bulk crystals

Proceedings of SPIE-The International Society for Optical Engineering

Volumn 4413, Issue , 2001, Pages 11-15

  Leszczynski, M ^a   Prystawko, P ^a   Czernecki, R ^a   Lehnert, J ^a   Perlin, P ^a   Wisniewski, P ^a   Skierbiszewski, C ^a   Suski, T ^a   Nowak, G ^a   Karouta, F ^b   Holst, J ^c   Grzegory, I ^a   Porowski, S ^a  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

Bulk crystals; GaN; Photoluminescence

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTALLOGRAPHY; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; LASER APPLICATIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; SINGLE CRYSTALS; SUBSTRATES; X RAY DIFFRACTION;

LASER REFLECTOMETRY;

GALLIUM NITRIDE;

EID: 17844398235     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.425412     Document Type: Article

References (13)

1. Properties, processing and applications of gallium nitride and related compounds