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Volumn 46, Issue 4, 2005, Pages 985-989

Effects of a cap layer on the confined sublevels in near-surface InAs/GaAs quantum dots

Author keywords

Atomic force microscope; Indium arsenide; Near surface potential barrier; Photoluminescence; Self assembled quantum dot; Strained potential

Indexed keywords


EID: 17744400335     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (11)

References (16)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.