High-response i-InAs/n-GaAs quantum-dot infrared photodetector with no current blocking barrier

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 3, 2004, Pages 1218-1220

  Lee, Sang Jun ^a   Noh, Sam Kyu ^a   Choe, Jung Woo ^b   Lee, Uk Hyun ^c   Hong, Sung Chul ^c   Lee II, Jung ^d  

^a Korea Research Institute of Standards and Science   (South Korea)

^b Kyung Hee University   (South Korea)

^c Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^d Korea Institute of Science and Technology   (South Korea)

Author keywords

Detectivity; Indium arsenide; Infrared photodetector; Quantum dot; Responsivity

Indexed keywords

ATOMIC FORCE MICROSCOPY; HETEROJUNCTIONS; INFRARED DETECTORS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

BLOCKING LAYERS; DETECTIVITY; INDIUM ARSENIDES; RESPONSIVITY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 2442600506     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.1218     Document Type: Article

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