SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 418, Issue 3, 1998, Pages 536-542

Electronic states in near-surface quantum wells

(4) Vlaev, S J a,b Muro Ortega, M R a Contreras Solorio, D A a Velasco, V R c

a UNIVERSIDAD AUTÓNOMA DE ZACATECAS (Mexico)

b INSTITUTE OF GENERAL AND INORGANIC CHEMISTRY (Bulgaria)

c INSTITUTO DE CIENCIA DE MATERIALES DE MADRID (Spain)

Author keywords

Semi empirical models and model calculations; Semiconductor semiconductor heterostructures

Indexed keywords

APPROXIMATION THEORY; ELECTRON ENERGY LEVELS; GREEN'S FUNCTION; HETEROJUNCTIONS; MATHEMATICAL MODELS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

ALUMINUM GALLIUM ARSENIDE; TIGHT-BONDING HAMILTONIAN MODEL;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032307278 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(98)00765-1 Document Type: Article

Times cited : (6)

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