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Volumn 186, Issue 1-2 SPEC. ISS., 2004, Pages 82-87

Transparent AlN layers formed by metal plasma immersion ion implantation and deposition

Author keywords

AlN; ERDA; IR Spectroscopy; Spectroscopic ellipsometry

Indexed keywords

ADSORPTION; DEPOSITION; ION IMPLANTATION; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; PLASMAS; SEMICONDUCTOR MATERIALS; THERMAL EFFECTS;

EID: 17744368469     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2004.04.017     Document Type: Article
Times cited : (7)

References (23)
  • 5
    • 0003685207 scopus 로고
    • Properties of group III nitrides
    • Edgar J.H Properties of group III nitrides INSPEC 1994 22
    • (1994) INSPEC , pp. 22
    • Edgar, J.H.1
  • 10
    • 0021563373 scopus 로고
    • J.I. Pankove (Ed.), Florida: Academic Press Chap. 3
    • Amer N.M Jackson W.B in: Pankove J.I (Ed.) Semiconductors and Semimetals vol. 21B 1984 83 Academic Press Florida Chap. 3.
    • (1984) Semiconductors and Semimetals , vol.21 B , pp. 83
    • Amer, N.M.1    Jackson, W.B.2
  • 12
    • 17744377569 scopus 로고
    • The Electrochemical Society, Extended Abstract 89-2
    • Zang H Pensl G Dömen A Leibenzeder S The Electrochemical Society, Extended Abstract 89-2 1989 699
    • (1989) , pp. 699
    • Zang, H.1    Pensl, G.2    Dömen, A.3    Leibenzeder, S.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.