Impacts of spatially reduced grain boundary recombination regions on multicrystalline silicon solar cell performance

Thin Solid Films

Volumn 451-452, Issue , 2004, Pages 312-315

  Nouri, H ^a   Dimassi, W ^a   Bouaicha M ^a   Hajji, M ^a   Boujmil, M F ^a   Saadoun M ^a   Bessais B ^a   Ezzaouia, H ^a   Bennaceur, R ^a  

^a Institut National de Recherche Scientifique et Technique Tunis   (Tunisia)

Author keywords

Gettering; Multicrystalline silicon; Porous silicon; Recombination

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTROLUMINESCENCE; GRAIN BOUNDARIES; HYDROGENATION; ION IMPLANTATION; MIXTURES; PASSIVATION; PHOTOVOLTAIC CELLS; POROUS SILICON; QUANTUM EFFICIENCY; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS;

GETTERING; MULTICRYSTALLINE SILICON;

SOLAR CELLS;

EID: 17644438139     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.11.033     Document Type: Conference Paper

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