Improvement of transport parameters in solar grade monocrystalline silicon by application of a sacrificial porous silicon layer

Solid State Communications

Volumn 123, Issue 1-2, 2002, Pages 7-10

  Khedher, N ^a   Hajji, M ^a   Bouaicha M ^a   Boujmil, M F ^a   Ezzaouia, H ^a   Bessais B ^a   Bennaceur, R ^a  

^a Institut National de Recherche Scientifique et Technique Tunis   (Tunisia)

Author keywords

A. Gettering; Porous Silicon; Silicon

Indexed keywords

CARRIER CONCENTRATION; CRYSTALLINE MATERIALS; DIFFUSION; ELECTRON TRANSPORT PROPERTIES; HALL EFFECT; HEAT TREATMENT; INTEGRATED CIRCUIT MANUFACTURE; POROUS SILICON;

MONOCRYSTALLINE SILICON;

SILICON WAFERS;

EID: 0036638651     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(02)00206-5     Document Type: Article

References (6)