Passivation of the grain boundary electrical activity in multicrystalline silicon: Aluminum treatment efficiency

Solid-State Electronics

Volumn 43, Issue 5, 1999, Pages 857-864

  M'Gafad, N ^a   Amzil, H ^a   Sayah, D ^b   Ballutaud, D ^c   Barbe M ^c  

^a MOHAMMED V UNIVERSITY IN RABAT   (Morocco)

^b FACULTÉ DES SCIENCES   (Morocco)

^c CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CRYSTALLINE MATERIALS; ELECTRIC CURRENT MEASUREMENT; GRAIN BOUNDARIES; INDUCED CURRENTS; PASSIVATION; VOLTAGE MEASUREMENT;

ELECTRON BEAM INDUCED CURRENT (EBIC) CONTRAST IMAGING;

SEMICONDUCTING SILICON;

EID: 0032681353     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00011-8     Document Type: Article

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