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Volumn 300, Issue 1-2, 1997, Pages 64-67

Combined impurity gettering effects of helium-induced cavities and oxygen precipitates created by plasma immersion ion implantation

(5) Min, Jing a Chu, Paul K a Lu, Xiang b Iyer, S Sundar Kumar b Cheung, Nathan W b

a CITY UNIVERSITY OF HONG KONG (Hong Kong)

b UNIVERSITY OF CALIFORNIA (United States)

Author keywords

Helium; Oxygen; Plasma processing and deposition

Indexed keywords

ANNEALING; BUBBLE FORMATION; DEPOSITION; DIFFUSION IN SOLIDS; HELIUM; ION IMPLANTATION; OXYGEN; PLASMA APPLICATIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY;

GETTERING EFFECTS; PLASMA IMMERSION ION IMPLANTATION;

SEMICONDUCTING FILMS;

EID: 0031141119 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(96)09515-6 Document Type: Article

Times cited : (10)

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