Phosphorus-diffused silicon solar cell emitters with plasma enhanced chemical vapor deposited silicon carbide

Solar Energy Materials and Solar Cells

Volumn 87, Issue 1-4, 2005, Pages 667-674

  Orpella, A ^a   Vetter, M ^a   Ferre R ^a   Martin I ^a   Puigdollers, J ^a   Voz, C ^a   Alcubilla, R ^a  

^a UNIVERSITAT POLITÈCNICA DE CATALUNYA   (Spain)

Author keywords

Amorphous silicon carbide (a SIC:H(n)); Emitter saturation current density; Passivation; Solar cells

Indexed keywords

CURRENT DENSITY; DIFFUSION; PASSIVATION; PHOSPHORUS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; SILICON CARBIDE;

AMORPHOUS SILICON CARBIDE (A-SIC:H(N)); EMITTER SATURATION CURRENT DENSITY; SHEET RESISTANCE; SURFACE RECOMBINATION;

SOLAR CELLS;

EID: 17644423474     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2004.08.021     Document Type: Conference Paper

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