In situ-doped amorphous Si0.8C0.2 emitter bipolar transistors

IEEE Electron Device Letters

Volumn 20, Issue 11, 1999, Pages 592-594

  Orpella, A ^a   Bardes D ^a   Alcubilla, R ^a   Marsal, L F ^b   Pallares J ^b  

^a UNIVERSITAT POLITÈCNICA DE CATALUNYA   (Spain)

^b ETSE URV ^*  (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; SEMICONDUCTOR DOPING; SILICON CARBIDE;

EMITTER GUMMEL NUMBERS;

BIPOLAR TRANSISTORS;

EID: 0033221693     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.798054     Document Type: Article

References (9)

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