Effect of plasma immersion ion implantation on the thermal stability of diffusion barrier layers

Surface and Coatings Technology

Volumn 186, Issue 1-2 SPEC. ISS., 2004, Pages 77-81

  Kumar, Mukesh ^a,b,c   Rajkumar, ^c   Raole, P M ^d   Gupta, S K ^d   Kumar, Dinesh ^b   George, P J ^b  

^a LABORATORIO TASC   (Italy)

^b KURUKSHETRA UNIVERSITY   (India)

^c Semiconductor Complex Ltd   (India)

^d INSTITUTE FOR PLASMA RESEARCH   (India)

Author keywords

Copper; Diffusion barrier; Plasma immersion ion implantation; Scanning electron microscope; X ray diffraction

Indexed keywords

ACTIVATION ENERGY; ANNEALING; DIFFUSION; ION IMPLANTATION; METALLIC FILMS; REFRACTORY MATERIALS; SCANNING ELECTRON MICROSCOPY; TITANIUM NITRIDE; X RAY DIFFRACTION ANALYSIS;

COPPER DIFFUSION; COPPER METAL FILMS; DIFFUSION BARRIERS; PLASMA IMMERSION ION IMPLANTATION (PIII);

PLASMAS;

ION IMPLANTATION;

EID: 17644420705     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2004.04.016     Document Type: Article

References (30)

1. Yamashita K Odanaka S IEEE Trans. Electron Devices 47 2000 90
2. Lin X.W Parmanik D Solid State Technol. 1998 63
3. Lloyd J.R Clement J.J Thin Solid Films 262 1995 135
4. Gardner D.S Onuki J Kudoo K Misawa Y Vu Q.T Thin Solid Films 262 1995 104
5. Murarka S.P Verner I.V Gutmann R.J Copper-Fundamental Mechanism for Microelectronic Applications 2000 Wiley New York
6. Ward W.J Carroll K.M J. Electrochem. Soc.: Solid State Sci. Technol. 129 1982 227
7. Akhmedova M.M Sov. Phys., Semicond. 10 1976 1400
8. S.K. Gandhi, VLSI Fabrication Principles, Wiley, New York, 1983, pp. 420-445.
9. Nicolet M.A Thin Solid Films 52 1978 415
10. Wittmer M J. Vac. Sci. Technol. A2 2 1984
11. Ono H Nakano T Ohta T Appl. Phys. Lett. 64 1994 151
12. Saito S Matsuda K Nishizawa K Sakiyama K Mater. Res. Soc. 1987 319
13. Wang S.-Q Raaijmakers I Burrow B.J Suthar S Redkar S Kim K.B J. Appl. Phys. 68 1990 5176
14. Holloway K Fryer P.M Cabral C Jr. Harper J.M.E Bailey P.J Kelleher K.H J. Appl. Phys. 71 1992 5433
15. Imahori J Oku T Murakami M Thin Solid Films 301 1997 142
16. Mandl S Gunzel R Richter E Moller W J. Vac. Sci. Technol., B 17 1999 832
17. Yukimura K Masanori K. et al. J. Vac. Sci. Technol., B 17 1999 840
18. Anders A Handbook of Plasma Immersion Ion Implantation 2000 Wiley New York
19. Conard J.R Radtke L.J Dodd R.A Worzala F.J Tran N.C J. Appl. Phys. 62 1987 4591
20. Chu P.K Chan C Cheung N.W Semicond. Int. 19 1996 165
21. Chu P.K Fletch S.B Kellerman P Sinclair F Larson L.A Mizune B Solid State Technol. 42 1999 55
22. Bernstein J.D Qin S Chung C King T.J IEEE Trans. Electron Devices 3 1996 1876
23. Rajkumar T.J. Kumar M George P.J Mukherjee S Chari K.S Surf. Coat. Technol. 156 2002 253
24. M. Kumar, Rajkumar, D. Kumar, P.J. George, A.K. Paul, communicated to Thin Solid Films.
25. Apblett C Muira D Sullivan M Ficalora P.J J. Appl. Phys. 71 1992 4925
26. Ono W Akhmedova J.M Sov. Phys. Semicond. 8 1978 1200
27. Li J Strane J.W Russell S.W Hong S.Q Mayer J.W Marais T.K Theron C.C Pretorious R J. Appl. Phys. 72 1992 2810
28. Raole P.M Narsale A.M Kothari D.C Pawar P.S Gogawale S.V Guzman L Dapor M Mater. Sci. Eng., A 115 1989 73
29. Wilson H Thin Solid Films 33 1976 205
30. Holloway K Fryer P.M Cabrai C Jr. Harper J.M.E Bailey P.J Kelleher K.H J. Appl. Phys. 71 1992 5433