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Volumn , Issue , 2004, Pages 337-340

Influence of self heating in a BiCMOS on SOI technology

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CAPACITANCE; COMPUTER SIMULATION; HEAT RESISTANCE; HEATING; METALLIZING; POLYSILICON; SILICON ON INSULATOR TECHNOLOGY;

EID: 17644412931     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (7)

References (11)
  • 2
    • 1042300823 scopus 로고    scopus 로고
    • Thermal resistance of (H)BTs on bulk Si, SOI and glass
    • W.D.van Noort, and R. Dekker, "Thermal Resistance of (H)BTs on Bulk Si, SOI and Glass," in proc IEEE BCTM, pp. 129-132, 2003.
    • (2003) Proc IEEE BCTM , pp. 129-132
    • Van Noort, W.D.1    Dekker, R.2
  • 5
    • 0036610602 scopus 로고    scopus 로고
    • Compact modeling of thermal resistnace in bipolar transistors on bulk and SOI substrates
    • A. Pacelli, P. Palestri, and M. Mastrapasqua, "Compact Modeling of Thermal Resistnace in Bipolar Transistors on Bulk and SOI Substrates," IEEE Transactions on Electron Devices, vol. 49, pp. 1027-1033, 2002.
    • (2002) IEEE Transactions on Electron Devices , vol.49 , pp. 1027-1033
    • Pacelli, A.1    Palestri, P.2    Mastrapasqua, M.3
  • 7
    • 0033317033 scopus 로고    scopus 로고
    • A physics-based dynamic thermal impedance model for vertical bipolar transistors on SOI substrates
    • J.S. Brodsky, R.M. Fox, and D.T. Zweidinger, "A Physics-Based Dynamic Thermal Impedance Model for Vertical Bipolar Transistors on SOI Substrates," IEEE Transactions on Electron Devices, vol. 46, pp. 2333-2339, 1999.
    • (1999) IEEE Transactions on Electron Devices , vol.46 , pp. 2333-2339
    • Brodsky, J.S.1    Fox, R.M.2    Zweidinger, D.T.3
  • 8
    • 0028483556 scopus 로고
    • A low-capacitance bipolar/BiCMOS isolation technology, part II-circuit performance and device self-heating
    • J.N. Burghartz, A.O. Cifuentes, and J.D. Warnock, "A Low-Capacitance Bipolar/BiCMOS Isolation Technology, Part II-Circuit Performance and Device Self-Heating," IEEE Transactions on Electron Devices, vol. 41, pp. 1388-1395, 1994.
    • (1994) IEEE Transactions on Electron Devices , vol.41 , pp. 1388-1395
    • Burghartz, J.N.1    Cifuentes, A.O.2    Warnock, J.D.3
  • 9
    • 0026395273 scopus 로고
    • Scalable small-signal model for BJT self-heating
    • Dec.
    • R.M. Fox and S.-G. Lee, "Scalable small-signal model for BJT self-heating," IEEE Electron Device Letters, vol. 12, pp. 649-651, Dec. 1991.
    • (1991) IEEE Electron Device Letters , vol.12 , pp. 649-651
    • Fox, R.M.1    Lee, S.-G.2
  • 10
    • 17644397351 scopus 로고    scopus 로고
    • Integrated Systems Engineering AG, Zurich, Switzerland, DESSIS-ISE release 8.5, 2003
    • Integrated Systems Engineering AG, Zurich, Switzerland, DESSIS-ISE release 8.5, 2003.
  • 11
    • 0036132423 scopus 로고    scopus 로고
    • Modeling thermal resistance in trench-isolated bipolar technologies including trench heat flow
    • D.J. Walkey, T.J. Smy, C. Reimer, M. Schröter, H. Tran, and D. Marchesan, "Modeling thermal resistance in trench-isolated bipolar technologies including trench heat flow," Solid State Elec. 46, pp. 7-17, 2002.
    • (2002) Solid State Elec. , vol.46 , pp. 7-17
    • Walkey, D.J.1    Smy, T.J.2    Reimer, C.3    Schröter, M.4    Tran, H.5    Marchesan, D.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.