Effects of resonant mode coupling on optical characteristics of InGaN-GaN-AlGaN lasers

IEEE Journal of Quantum Electronics

Volumn 41, Issue 4, 2005, Pages 517-524

  Smolyakov, Gennady A ^a   Eliseev, Petr G ^a   Osiński, Marek ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

Coupled waveguides; Normal modes; Resonant mode coupling; Semiconductor lasers

Indexed keywords

ELECTRIC CURRENTS; LASER MODES; LIGHT EMISSION; OPTICAL PROPERTIES; QUANTUM WELL LASERS; REFRACTIVE INDEX; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; WAVEGUIDES;

COUPLED WAVEGUIDES; INJECTION CURRENT; NORMAL MODES; RESONANT MODE COUPLING;

SEMICONDUCTOR LASERS;

EID: 17644411680     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2005.843619     Document Type: Article

References (33)

1. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, "InGaN-based multi-quantum-well-structure laser diodes," Jpn. J. Appl. Phys., Pt. 2 Lett., vol. 35, pp. L74-L76, 1996.
2. S. Nakamura and G. Fasol, The Blue Laser Diode. Berlin: Springer-Verlag, 1997.
3. P. G. Eliseev and A. E. Drakin, "Analysis of the mode internal coupling in InGaAs/GaAs laser diodes," Laser Phys., vol. 4, pp. 485-492, 1994.
4. P. G. Eliseev, G. A. Smolyakov, and M. Osiński, "Ghost modes and their signature in InGaN diode laser spectra," in Proc. 2nd Int. Symp. Blue Laser and Light Emitting Diodes (2nd ISBLLED), Kisarazu, Japan, Sep.-Oct. 29-2, 1998, Paper no. Th-10, pp. 413-416.
5. G. A. Smolyakov, P. G. Eliseev, and M. Osiński, "Design limitations for InGaN/AlGaN/GaN lasers imposed by resonant mode coupling," in Tech. Digest, 19th Annual Conf. Lasers & Electro-Optics, Baltimore, MD, May 23-28, 1999, Paper no. CtuU5, p. 203.
6. P. G. Eliseev, G. A. Smolyakov, and M. Osiniski, "Ghost modes and resonant effects in AlGaN/InGaN/GaN lasers," IEEE J. Sel. Topics Quantum Electron., vol. 5, no. 3, pp. 771-779, May-Jun. 1999.
7. P. G. Eliseev, "Waveguide optics of new short-wavelength laser diodes," in Proc. SPIE Laser Optics 2000: Semiconductor Lasers and Optical Communication, vol. 4354, S. A. Gurevich and N. N. Rosanov, Eds., St. Petersburg, Russia, Jun. 2000, pp. 12-23.
8. V. E. Bougrov and A. S. Zubrilov, "Optical confinement and threshold currents in III-V nitride heterostructures: Simulation," J. Appl. Phys., vol. 81, pp. 2952-2956, 1997.
9. 1-xN laser diodes," J. Appl. Phys., vol. 84, pp. 1196-1203, 1998.
10. G. Hatakoshi, M. Onomura, and M. Ishikawa, "Optical, electrical and thermal analysis for GaN semiconductor lasers," Int. J. Numerical Modeling-Electronic Networks, Devices, and Fields, vol. 14, pp. 303-323, 2001.
11. M. Onomura, S. Saito, K. Sasanuma, G. Hatakoshi, M. Nakasuji, J. Rennie, L. Sugiura, S. Nunoue, M. Suzuki, J. Nishio, and K. Itaya, "Analysis of transverse modes of nitride-based laser diodes," in Proc. IEEE 16th Int. Semicond. Laser Conf., Nara, Japan, Oct. 1998, pp. 7-8.
12. S. Heppel, J. Off, F. Scholz, and A. Hangleiter, "Complex spectral behavior of the waveguide modes in GaInN/GaN laser structures," in Proc. IEEE 16th Int. Semicond. Laser Conf., Nara, Japan, Oct. 1998, pp. 11-12.
13. D. K. Young, M. P. Mack, A. C. Abare, M. Hansen, L. A. Coldren, S. P. DenBaars, E. L. Hu, and D. D. Awschalom, "Near-field scanning optical microscopy of indium gallium nitride multiple-quantum-well laser diodes," Appl. Phys. Lett., vol. 74, pp. 2349-2351, 1999.
14. M. Onomura, S. Saito, K. Sasanuma, G. Hatakoshi, M. Nakasuji, J. Rennie, L. Sugiura, S. Nunoue, J. Nishio, and K. Itaya, "Analysis of transverse modes of nitride-based laser diodes," IEEE J. Sel. Topics Quantum Electron., vol. 5, no. 3, pp. 765-770, May-Jun. 1999.
15. H. D. Summers, P. M. Smowton, P. Blood, M. Dineen, R. M. Perks, D. P. Bour, and M. Kneissl, "Spatially and spectrally resolved measurement of optical loss in InGaN laser structures," J. Cryst. Growth, vol. 230, pp. 517-521, 2001.
16. H. Haus, Waves and Fields in Optoelectronics. Englewood Cliffs, NJ: Prentice-Hall, 1984, sec. 7.6, pp. 217-220.
17. W. Streifer, M. Osiński, and A. Hardy, "Reformulation of the coupled mode theory of multiwaveguide systems," J. Lightw. Technol., vol. LT-5, no. 1, pp. 1-4, Jan. 1987.
18. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, "Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation," Appl. Phys. Lett., vol. 70, pp. 2753-2755, 1997.
19. M. E. Lin, B. N. Sverdlov, S. Strite, H. Morkoç, and A. E. Drakin, "Refractive indices of wurtzite and zinc-blende GaN," Electron. Lett., vol. 29, pp. 1759-1761, 1993.
20. 0.9N/GaN double heterostructure," Jpn. J. Appl. Phys., Pt. 2 Lett., vol. 32, pp. L1000-L1002, 1993.
21. H. Morkoç, Nitride Semiconductors and Devices. New York: Springer-Verlag, 1999.
22. 1-yN alloys," J. AppL Phys., vol. 89, pp. 1108-1115, 2001.
23. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Matsushita, and T. Mukai, "Blue InGaN-based laser diodes with an emission wavelength of 450 nm," Appl. Phys. Lett., vol. 76, pp. 22-24, 2000.
24. I. Akasaki, S. Sota, H. Sakai, T. Tanaka, M. Koike, and H. Amano, "Shortest wavelength semiconductor laser diode," Electron. Lett. vol. 32, pp. 1105-1106, 1996.
25. F. Renzoni, J. F. Donegan, and C. H. Patterson, "Optical gain and linewidth enhancement factor in bulk GaN," Semicond. Sci. Technol vol. 14, pp. 517-520, 1999.
26. H. Kawaguchi, "Bistability and differential gain in semiconductor lasers," Jpn. J. Appl. Phys., vol. 21, pp. 371-376, 1982.
27. J. Chen, P. E. Barnsley, and H. J. Wickes, "Method of determining differential gain coefficient for bistable semiconductor-laser diodes," Electron. Lett., vol. 27, pp. 1745-1747, 1991.
28. T. Odagawa, T. Machida, T. Sanada, K. Nakai, K. Wakao, and S. Yamakoshi, "High repetition rate operation of bistable laser-diodes," Proc. IEEJ. Optoelectron., vol. 138, pp. 75-78, 1991.
29. M. Yamada, "A theoretical analysis of self-sustained pulsation phenomena in narrow-stripe semiconductor lasers," IEEE J. Quantum Electron., vol. 29, no. 5, pp. 1330-1336, May 1993.
30. P. G. Eliseev and A. E. Drakin, "The negative differential gain in SL InGaAs QW laser diodes," in Proc. SPIE Physics and Simulation of Optoelectronic Devices III, vol. 2399, M. Osiński and W. W. Chow, Eds., San Jose, CA, Feb. 1995, pp. 302-306.
31. P. G. Eliseev, G. Beister, A. E. Drakin, I. V. Akimova, G. Erbert, J. Maege, and J. Sebastian, "Power hysteresis and wave-guide bistability of stripe quantum-well InGaAs/GaAs/GaAlAs heterolasers with a strained active layer," Kvantovaya Elekt., vol. 22, pp. 309-320, 1995.
32. G. Pham and G. H. Duan, "Self-pulsation in two-section DFB semiconductor lasers and its synchronization to an external signal," IEEE J. Quant. Electron., vol. 34, no. 6, pp. 1000-1008, Jun. 1998.
33. S. K. Hwang and J. M. Liu, "Dynamical characteristics of an optically injected semiconductor laser," Opt. Commun., vol. 83, pp. 195-205, 2000.