Plasma immersion ion implantation for shallow junctions in silicon

Applied Surface Science

Volumn 138-139, Issue 1-4, 1999, Pages 224-227

  Pinter I ^a   Abdulhadi, A H ^a   Makaro Zs ^a   Khanh, N Q ^a   Adam M ^a   Barsony I ^a   Poortmans, J ^b   Sivoththaman, S ^b   Song, Hai Zhi ^c   Adriaenssens, G J ^c  

^a Res Inst for Techn Physics and Materials Science   (Hungary)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

PIII; Plasma source ion implantation; Shallow junctions

Indexed keywords

EID: 0000810250     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00424-3     Document Type: Article

References (4)

1. H.J. Bohm, H. Wendt, H. Oppolzer, K. Masseli, R. Kassing, Diffusion of B and As from polycrystalline silicon during rapid optical annealing, J. Appl. Phys. 62 (1987) 2784.
2. K. Park, S. Batra, S. Banerjee, Ultra shallow junction in silicon using amorphous and polycrystalline silicon diffusion sources, J. Elect. Mater. 20 (1991) 251.
3. G. Böhm, R. Günzel, 50-kV pulse generator for plasma source ion implantation, J. Vac. Sci. Tech. B 12 (2) (1994) 821-822.
4. I. Pintér, M. Ádám, Cs. Dücsô, N.Q. Khánh, I. Bársony, Plasma Immersion Doping For Silicon Solar Cell Application, Supplément á la Revue: Le Vide No. 275 Janvier-Février-Mars, 1995, p. 410.