A new poly-Si TFT structure with air cavities at the gate-oxide edges

IEEE Electron Device Letters

Volumn 22, Issue 11, 2001, Pages 539-541

  Lee, M C ^a   Jung, S H ^a   Song, I H ^a   Han, M K ^a  

^a Seoul National University   (South Korea)

Author keywords

Air cavity; Poly Si TFT; Stability; Threshold voltage shift; Vertical electric field

Indexed keywords

AMORPHOUS SILICON; ELECTRIC FIELDS; ETCHING; GATES (TRANSISTOR); ION IMPLANTATION; LEAKAGE CURRENTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYSILICON; SEMICONDUCTOR DEVICE STRUCTURES; SILICA; THICK FILMS; THRESHOLD VOLTAGE;

AIR CAVITY; ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION; DEVICE STABILITY; ELECTRICAL STRESS; VERTICAL ELECTRIC FIELD; WET ETCHING;

THIN FILM TRANSISTORS;

EID: 0035506834     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.962656     Document Type: Article

References (12)

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