Formation of extremely shallow junctions for sub-90 nm devices

Surface and Coatings Technology

Volumn 186, Issue 1-2 SPEC. ISS., 2004, Pages 68-72

  Walther, Steve R ^a   Mehta, S ^a   Jeong, U ^a   Lenoble, D ^b  

^a VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

^b STMICROELECTRONICS   (France)

Author keywords

Implant dose control; PLAD; Plasma implant; Shallow junctions

Indexed keywords

CONTROL SYSTEMS; ION IMPLANTATION; PLASMAS; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS;

BEAMLINE IMPLANTATION; LOW ENERGY SCALING; PLASMA-BASED IMPLANTS; PULSED PLASMA INTERACTION;

SEMICONDUCTOR JUNCTIONS;

COATING;

EID: 17644395656     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2004.04.014     Document Type: Article

References (12)

1. Liebert R.B Walther S Felch S Fang Z Pedersen B Hacker D Proc. 2000 Int. Conf. Ion Implant. Tech., Alpbach, Austria, Sept. 7-22 2000 472 IEEE NJ, USA
2. Walther S Lenoble D Fang Z Liebert R.B Proc. 2000 Int. Conf. Ion Implant. Tech., Alpbach, Austria, Sept. 17-22 2000 492 IEEE NJ, USA
3. Walther S Liebert R.B Felch S Fang Z Woong Koo B Proc. 2000 Int. Conf. Ion Implant. Tech., Alpbach, Austria, Sept. 17-22 2000 500 IEEE NJ, USA
4. Woong Koo B Fang Z Felch S Proc. 2000 Int. Conf. Ion Implant. Tech., Alpbach, Austria, Sept. 17-22 2000 504 IEEE NJ, USA
5. Renau A Scheuer J to be published in Proc. 2002 Int. Conf. Ion Implant. Tech., Taos, New Mexico USA, Sept. 2002
6. Jeong U Mehta S Campbell C Lindberg R Zhao Z Cusson B Buller J to be published in Proc. 2002 Int. Conf. Ion Implant. Tech., Taos, New Mexico USA, Sept. 2002
7. Walther S.R Variam N Norasethekul S Weeman J Mehta S to be published in Proc. 2002 Int. Conf. Ion Implant. Tech., Taos, New Mexico USA, Sept. 2002
8. Lenoble D Grouillet A Haond M Felch S.B Fang Z Walther S Liebert R.B Proc. 2000 Int. Conf. Ion Implant. Tech., Alpbach, Austria, Sept. 17-22 2000 468 IEEE NJ, USA
9. Lenoble D Arnaud F Grouillet A Liebert R Walther S Felch S.B Fang Z Haond M 2000 IEEE VLSI Symposium on VLSI Technology Tech. Proc., June 2000 IEEE NJ, USA
10. Yeap G.C.-F Felch S.B Bang D Lee B Lin M.R 1998 Intl. Conf. On Ion Implant. Tech. Proc. 1999 114 117 IEEE NJ, USA
11. Lenoble D Boeuf F Slotnicki T Grouillet A Walther S Hacker D to be published in Proc. 2002 Int. Conf. Ion Implant. Tech., Taos, New Mexico USA, Sept. 2002
12. Qin S Bradley M Kellerman P IEEE Transactions on Plasma Science 31 3 2003 (June) 369