Resonance-tunneling-assisted emission enhancement in green light-emitting diodes with nanocraters formed in InGaNGaN quantum-well active layers

Applied Physics Letters

Volumn 86, Issue 13, 2005, Pages 1-3

  Song, Jae Ho ^a   Song, G Hugh ^a   Lee, Jhang W ^a   Ok, Young Woo ^a   Seong, Tae Yeon ^a   Laboutin, Oleg ^b   Deluca, Paul ^b   Choi, H K ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b KOPIN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; MATHEMATICAL MODELS; QUANTUM THEORY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

MULTI-QUANTUM WELLS (MQW); NANOCRATER MODELS; REDSHIFT; ROOM TEMPERATURE;

LIGHT EMITTING DIODES;

EID: 17644389899     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1890475     Document Type: Article

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