Investigation of the effect of indium mole fractions on recombination processes in AlInGaN layers grown by pulsed MOCVD

Solid State Communications

Volumn 127, Issue 9-10, 2003, Pages 661-665

  Song, Jae Ho ^a   Lee, Jhang W ^a   Yu, P W ^a   Ryu, Mee Yi ^b   Zhang, J ^c   Kuokstis, E ^c   Yang, J W ^c   Asif Khan, M ^c  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Air Force Institute of Technology   (United States)

^c The Department of Mechanical Engineering   (United States)

Author keywords

A. Semiconductors; D. Optical properties; E. Luminescence; E. Time resolved optical spectroscopies

Indexed keywords

LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM;

MOLE FRACTIONS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0042014368     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(03)00522-2     Document Type: Article

References (19)

1. Tamulaitis G., Kazlauskas K., Jursenas S., Ukauskas A., Khan M.A., Yang J.W., Zhang J., Simin G., Shur M.S., Gaska R. Appl. Phys. Lett. 77:2000;2136.
2. Ryu M.-Y., Chen C.Q., Kuokstis E., Yang J.W., Simin G., Asif Khan M., Sim G.G., Yu P.W. Appl. Phys. Lett. 80:2002;3943.
3. Adivarahan V., Chitnis A., Zhang J.P., Shatalov M., Yang J.W., Simin G., Asif Khan M., Gaska R., Shur M.S. Appl. Phys. Lett. 79:2001;4240.
4. Itoh K., Hiramatsu K., Amano H., Akasaki I. J. Cryst. Growth. 104:1990;533.
5. Im J.S., Kollmer H., Off J., Sohmer A., Scholz F., Hangleiter A. Phys. Rev. B. 57:1998;R9435.
6. Asif Khan M., Yang J.W., Gaska R., Shur M.S., zur Loye H.-C., Tamulaitis G., Zukauskas A., Smith D.J., Chandrasekhar D., Bicknell-Tassius R. Appl. Phys. Lett. 76:2000;1161.
7. Asif Khan M., Yang J.W., Simin G., Gaska R., Shur M.S., Bykhovski A.D. Appl. Phys. Lett. 75:1999;2806.
8. Chichibu S., Sota T., Wada K., Nakamura S. J. Vac. Sci. Technol. B. 16:1998;2204.
9. Narukawa Y., Kawakami Y., Fujita S., Nakamura S. Appl. Phys. Lett. 70:1997;981.
10. Narukawa Y., Kawakami Y., Fujita S., Nakamura S. Phys. Rev. B. 59:1999;R1938.
11. Wang T., Nakagawa D., Lachab M., Sugahara T., Sakai S. Appl. Phys. Lett. 74:1999;3128.
12. Chen C., Yang J., Ryu M.Y., Zhang J., Kuokstis E., Simin G., Asif Khan M. Jpn. J. Appl. Phys., Part 1. 41:2002;1924.
13. Varshni Y.P. Physica (Amsterdam). 34:1967;149.
14. Olisthoorn S.M., Driessen F.A.J.M., Eijkelenboom A.P.A.M., Giiling L.J. J. Appl. Phys. 73:1993;7798.
15. Driessen F.A.J.M., Bauhuis G.J., Olisthoorn S.M., Giiling L.J. Phys. Rev. B. 48:1993;7889.
16. Cho Y.-H., Gainer G.H., Fisher A.J., Song J.J., Keller S., Mishra U.K., DenBaars S.P. Appl. Phys. Lett. 73:1998;1370.
17. Feldmann J., Peter G., Gobel E.O., Dawson P., Moore K., Foxon C., Elliott R.J. Phys. Rev. Lett. 59:1987;2337.
18. Gurioli M., Vinattieri A., Colocci M., Deparis C., Massies J., Neu G., Bosacchi A., Franchi S. Phys. Rev. B. 44:1991;3115.
19. Dumke P.W. Phys. Rev. 105:1957;139.