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Applied Physics B: Lasers and Optics

Volumn 80, Issue 4-5, 2005, Pages 521-526

Deep bandtail states picosecond intensity-dependent carrier dynamics of GaN epilayer under high excitation

(5) Guo, B a,b Qiu, Z R b Lin, J Y c Jiang, H X c Wong, K S b

a ZHEJIANG UNIVERSITY (China)

b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (Hong Kong)

c KANSAS STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; GAIN CONTROL; GALLIUM NITRIDE; GROUND STATE; PHOTOLUMINESCENCE; SATURATION (MATERIALS COMPOSITION); ULTRAVIOLET RADIATION;

BANDTAIL STATES; CARRIER DYNAMICS; EPILAYERS;

CARRIER CONCENTRATION;

EID: 17444425746 PISSN: 09462171 EISSN: None Source Type: Journal
DOI: 10.1007/s00340-005-1766-9 Document Type: Article

Times cited : (6)

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