Excitonic absorption of gan epilayers on sapphire: dynamics, intensity, and temperature dependence

Physical Review B - Condensed Matter and Materials Physics

Volumn 59, Issue 3, 1999, Pages 2254-2260

  Briot, O ^b   Ruffenach Clur, S ^b   Aulombard, R L ^b   Honerlage B ^a  

^a INSTITUT DE PHYSIQUE ET CHIMIE DES MATÉRIAUX DE STRASBOURG   (France)

^b UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001188830     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.59.2254     Document Type: Article

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