SCOPUS 정보 검색 플랫폼

2003 Nanotechnology Conference and Trade Show - Nanotech 2003

Volumn 2, Issue , 2003, Pages 270-273

A framework for generic physics based double-gate MOSFET modeling

(6) Chan, Mansun a,c Taur, Yuan b Lin, Chung Hsun c He, Jin c Niknejad, Ali M c Hu, Chenming d

a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (Hong Kong)

b UNIVERSITY OF CALIFORNIA (United States)

c UNIVERSITY OF CALIFORNIA (United States)

d TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (Taiwan)

Author keywords

BSIM; Circuit Simulation; CMOS Device; Device model; Double gate MOSFET; SPICE

Indexed keywords

BOUNDARY CONDITIONS; CHANNEL CAPACITY; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; DATA STRUCTURES; ELECTRIC CURRENTS; FABRICATION; FERMI LEVEL; GATES (TRANSISTOR); MATHEMATICAL MODELS;

BSIM; CHARGE DISTRIBUTION; CIRCUIT SIMULATION; DEVICE MODELS; DOUBLE-GATE MOSFET; SPICE;

MOSFET DEVICES;

EID: 2942642248 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (12)

References (6)

1
- 85056911965
- Monte Carlo simulation of a 30-nm dual-gate MOSFET: How far can silicon go?
- D. Frank, S. Laux, and M. Fischetti, "Monte Carlo Simulation of a 30-nm Dual-Gate MOSFET: How Far Can Silicon Go?" in IEDM Tech. Dig., 1992, pp. 553
- (1992) IEDM Tech. Dig. , pp. 553
- Frank, D.¹ Laux, S.² Fischetti, M.³

2
- 6344242554
- MSM2003
- J. He, X. Xi, M. Chan, C.-H. Lin, A. Niknejad, and C. Hu, "An Advanced Charge-Based MOSFET Transistor Model for Circuit Simulation", MSM2003
- An Advanced Charge-Based MOSFET Transistor Model for Circuit Simulation
- He, J.¹ Xi, X.² Chan, M.³ Lin, C.-H.⁴ Niknejad, A.⁵ Hu, C.⁶

3
- 0033732282
- An analytical solution to a double-gate MOSFET with undoped body
- July
- Y. Taur, "An Analytical Solution to a Double-gate MOSFET with Undoped Body", IEEE Electron Device Letters, vol. 21, pp. 245-247, July 2000
- (2000) IEEE Electron Device Letters , vol.21 , pp. 245-247
- Taur, Y.¹

4
- 0035694506
- Analytic solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFETs
- December
- Y. Taur, "Analytic Solutions of Charge and Capacitance in Symmetric and Asymmetric Double-Gate MOSFETs", IEEE Trans. of Electron Devices, vol. 48, no. 12, pp. 2861-2869, December 2001
- (2001) IEEE Trans. of Electron Devices , vol.48 , Issue.12 , pp. 2861-2869
- Taur, Y.¹

5
- 0029406130
- Threshold voltage model for deep-submicrometer fully-depleted SOI MOSFETs
- Nov.
- S. R. Banna, P. C.-H. Chan, P. K. Ko, C. T. Nguyen, and M. Chan, "Threshold Voltage Model for Deep-Submicrometer Fully-Depleted SOI MOSFETs", IEEE Trans. on Electron Devices, Vol. 42, No. 11, pp. 1949-1955, Nov. 1995.
- (1995) IEEE Trans. on Electron Devices , vol.42 , Issue.11 , pp. 1949-1955
- Banna, S.R.¹ Chan, P.C.-H.² Ko, P.K.³ Nguyen, C.T.⁴ Chan, M.⁵

6
- 0032187666
- Generalized scale length for two-dimensional effects in MOSFET's
- October
- D. J. Frank, Y. Taur, H.-S. P. Wong, "Generalized Scale Length for Two-Dimensional Effects in MOSFET's", IEEE Electron Device Letters, vol. 19, no. 10, pp. 385-387, October 1998
- (1998) IEEE Electron Device Letters , vol.19 , Issue.10 , pp. 385-387
- Frank, D.J.¹ Taur, Y.² Wong, H.-S.P.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.